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| High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 m 61 A 75 m Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C TC = 25C Pulse width limited by TJM T C = 25C -40 ... +150 150 -40 ... +150 IXTN IXTN IXTN IXTN 58N50 61N50 58N50 61N50 Maximum Ratings 500 500 20 30 58 61 232 244 625 C C C 2500 3000 V~ V~ Features International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (<100 pF) - reduced RFI * Low package inductance (< 10 nH) - easy to drive and to protect * Aluminium Nitride Isolation - increased current ratings Applications * * * * * DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies * * * * * V V G S miniBLOC, SOT-227 B E153432 V V A A A A W S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (T J = 25C unless otherwise specified) Min. Typ. Max. 500 1.7 4.0 200 500 2 58N50 61N50 85 75 V V nA A mA m m V DSS VGS(th) I GSS I DSS RDS(on) V GS = 0 V, ID = 5 mA V DS = V GS, ID = 12 mA V GS = 20 V DC, VDS = 0 V DS = 0.8 V DSS VGS = 0 V V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle 2 % TJ = 25C TJ = 125C Advantages * Easy to mount * Space savings * High power density (c) 1997 IXYS All rights reserved 95501B(4/97) IXTN 58N50 IXTN 61N50 Symbol Test Conditions Characteristic Values (T J = 25C unless otherwise specified) Min. Typ. Max. 20 30 11000 VGS= 0 V, V DS = 25 V, f = 1 MHz 1550 225 30 VGS = 10 V, V DS = 0.5 VDSS , ID = 50 A RG = 1 (External) 60 100 50 420 VGS= 10 V, VDS = 0.5 VDSS, I D = ID2 55 160 S pF pF pF ns ns ns ns nC nC nC 0.20 K/W 0.05 K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS I SM VSD Test Conditions VGS = 0 V Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 61 244 1.5 A A V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2 % trr IF = 50A, di/dt = -100 A/s, VR = 100 V 800 ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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